産(chan)品(pin)中心(xin)
GaN MOS
産品(pin)性能:耐壓650V,內阻低至(zhi)100mΩ
優勢特點:高頻高傚(xiao),高耐壓,耐高溫,高可靠性;可(ke)以實現節能降耗(hao),小體積,低重(zhong)量(liang),高功率密度。
應用領域(yu):氮化鎵鋰電池充電器(qi)/PD快充/大功率適配(pei)器(qi)
産品選型
| Part No. | Channel | VDS (V) | VGS (V) | VGS(th) (V) | RDS(ON) (mΩ)10V | RDS(ON) (mΩ)8V | RDS(ON) (mΩ)6V | ID (A) Tc=25℃ | EAS (mJ) | Ciss (pF) | Qg (nC) | Package |
| Part No. | Channel | VDS (V) | VGS (V) | VGS(th) (V) | RDS(ON) (mΩ)10V | RDS(ON) (mΩ)8V | RDS(ON) (mΩ)6V | ID (A) Tc=25℃ | EAS (mJ) | Ciss (pF) | Qg (nC) | Package | |
| ASDM9GN65TE | ![]() | N | 650 | ±20 | 2.0 | 230 | 9 | 500 | 21.5 | DFN8*8 | |||
| ASDM10GN65P | N | 650 | -10~7 | 1.0 | 160 | 360 | 10 | 71 | 2 | TO-220 | |||
| ASDM11GN65TE | N | 650 | ±20 | 2.0 | 270 | 11 | 490 | 12 | DFN8*8 | ||||
| ASDM13GN65P | N | 650 | ±20 | 2.0 | 270 | 13 | 490 | 12 | TO-220 | ||||
| ASDM15GN65P | N | 650 | -10~7 | 1.0 | 100 | 210 | 15 | 115 | 3 | TO-220 | |||
| ASDM15GN65TE | N | 650 | -10~7 | 1.0 | 100 | 210 | 15 | 123 | 3 | DFN8*8 | |||
| ASDM18GN65TE | ![]() | N | 650 | ±20 | 4.0 | 100 | 18 | 606 | 38 | DFN8*8 | |||
| ASDM23GN65P | N | 650 | ±20 | 2.0 | 150 | 23 | 500 | 12 | TO-220 | ||||
| ASDM23GN90P | N | 900 | ±20 | 4.5 | 175 | 23 | 606 | 38 | TO-220 |
産品中心
行業應用
服務支持
新聞(wen)資(zi)訊
關于我們




