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GaN MOS
産品性能：耐壓650V，內阻低至100mΩ
優勢特點：高頻高傚，高耐壓(ya)，耐高溫，高可靠性(xing)；可以實現節能(neng)降耗，小體積，低重量，高功率密度。
應用領域(yu)：氮化(hua)鎵鋰電(dian)池充(chong)電器/PD快充/大功率適配器
産品選型
| Part No. | Channel | VDS (V) | VGS (V) | VGS(th) (V) | RDS(ON) (mΩ)10V | RDS(ON) (mΩ)8V | RDS(ON) (mΩ)6V | ID (A) Tc=25℃ | EAS (mJ) | Ciss (pF) | Qg (nC) | Package |
| Part No. | Channel | VDS (V) | VGS (V) | VGS(th) (V) | RDS(ON) (mΩ)10V | RDS(ON) (mΩ)8V | RDS(ON) (mΩ)6V | ID (A) Tc=25℃ | EAS (mJ) | Ciss (pF) | Qg (nC) | Package | |
| ASDM9GN65TE |  | N | 650 | ±20 | 2.0 | 230 | 9 | 500 | 21.5 | DFN8*8 | |||
| ASDM10GN65P | N | 650 | -10~7 | 1.0 | 160 | 360 | 10 | 71 | 2 | TO-220 | |||
| ASDM11GN65TE | N | 650 | ±20 | 2.0 | 270 | 11 | 490 | 12 | DFN8*8 | ||||
| ASDM13GN65P | N | 650 | ±20 | 2.0 | 270 | 13 | 490 | 12 | TO-220 | ||||
| ASDM15GN65P | N | 650 | -10~7 | 1.0 | 100 | 210 | 15 | 115 | 3 | TO-220 | |||
| ASDM15GN65TE | N | 650 | -10~7 | 1.0 | 100 | 210 | 15 | 123 | 3 | DFN8*8 | |||
| ASDM18GN65TE | | N | 650 | ±20 | 4.0 | 100 | 18 | 606 | 38 | DFN8*8 | |||
| ASDM23GN65P | N | 650 | ±20 | 2.0 | 150 | 23 | 500 | 12 | TO-220 | ||||
| ASDM23GN90P | N | 900 | ±20 | 4.5 | 175 | 23 | 606 | 38 | TO-220 |
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